AO4826
MOSFET 2N-CH 60V 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO4826 is a dual N-channel MOSFET array designed for high-efficiency power management applications. This 60V device features a low Rds(on) of 25mOhm at 6.3A and 10V Vgs, with a gate charge of 58nC at 10V. The AO4826 utilizes Metal Oxide technology and operates with a logic level gate, making it suitable for a wide range of voltage levels. Its 8-SOIC package with a 0.154" width is ideal for surface mounting in space-constrained designs. The component's power dissipation is rated at 2W, and it operates across a temperature range of -55°C to 150°C. This MOSFET array finds application in automotive, industrial automation, and consumer electronics sectors where reliable power switching is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 30V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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