AO4822AL
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO4822AL is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 8A at 25°C. The device exhibits a low on-resistance (Rds On) of 19mOhm at 8A and 10V Vgs, contributing to reduced power dissipation. With a logic-level gate, it is suitable for direct interfacing with microcontrollers. The AO4822AL is packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration, offering a power dissipation of 2W. Key electrical parameters include a maximum gate charge (Qg) of 18nC at 10V and a maximum input capacitance (Ciss) of 888pF at 15V. The threshold voltage (Vgs(th)) is a maximum of 2.4V at 250µA. This MOSFET array operates across a temperature range of -55°C to 150°C (TJ) and finds application in areas such as battery management, power supplies, and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 888pF @ 15V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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