AO4812L
MOSFET 2N-CH 30V 6A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO4812L is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The low on-resistance, specified at 30 milliohms maximum at 6A and 10V Vgs, ensures minimal power dissipation. With a gate charge (Qg) of 6.3nC maximum at 10V and input capacitance (Ciss) of 310pF maximum at 15V, it offers good switching performance. The device is housed in an 8-SOIC package, suitable for surface mounting, and supports a maximum power dissipation of 2W. Operating temperature ranges from -55°C to 150°C. This MOSFET array is commonly utilized in consumer electronics, industrial power management, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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