AO4812
MOSFET 2N-CH 30V 6A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO4812 is a dual N-channel Power MOSFET array designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The low on-resistance of 30mOhm is achieved at 6A and 10V Vgs, with a typical gate charge (Qg) of 6.3nC at 10V. Input capacitance (Ciss) is a maximum of 310pF at 15V. The device is housed in an 8-SOIC package with a surface mount configuration, offering a power dissipation of 2W. Operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in power management solutions, automotive electronics, and consumer devices. The AO4812 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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