AO4806L
MOSFET 2N-CH 20V 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO4806L is a 20V, 2 N-Channel MOSFET array in an 8-SOIC package. This device features logic-level gate drive capability, with a Vgs(th) of 1V maximum. The drain-source on-resistance (Rds On) is a maximum of 14 mOhm at 9.4A and 10V Vgs. Input capacitance (Ciss) is specified at 1810pF maximum at 10V Vds, with a gate charge (Qg) of 17.9nC maximum at 4.5V Vgs. The component is rated for 2W of power dissipation and operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in power management and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1810pF @ 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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