AO4800L
MOSFET 2N-CH 30V 6.9A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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The Alpha & Omega Semiconductor Inc. AO4800L is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.9A at 25°C. With a low on-resistance (Rds On) of 27mOhm at 6.9A and 10V Vgs, it minimizes conduction losses. The AO4800L offers a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C. Key electrical parameters include input capacitance (Ciss) of 630pF at 15V and gate charge (Qg) of 7nC at 4.5V. The device is housed in a compact 8-SOIC (0.154", 3.90mm Width) package for surface mounting, making it suitable for use in power supplies, battery management systems, and portable electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 15V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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