AO4800B
MOSFET 2N-CH 30V 6.9A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: FET, MOSFET Arrays
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Alpha & Omega Semiconductor Inc. AO4800B is a dual N-channel MOSFET array in a surface-mount 8-SOIC package. This device offers a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 6.9A at 25°C. Featuring logic-level gate drive, the AO4800B exhibits a maximum Rds(On) of 27mOhm at 6.9A and 10V, with a maximum gate charge (Qg) of 7nC at 4.5V. Input capacitance (Ciss) is a maximum of 630pF at 15V. The component is rated for a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET array is commonly utilized in power management applications across automotive, industrial, and consumer electronics sectors. The device is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 15V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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