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AO4618

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AO4618

MOSFET N/P-CH 40V 8A/7A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4618 is a MOSFET array featuring complementary N-channel and P-channel configurations. This device offers a drain-source voltage (Vdss) of 40V and continuous drain currents of 8A for the N-channel and 7A for the P-channel at 25°C. With a maximum power dissipation of 2W and a low on-resistance (Rds On) of 19mOhm at 8A and 10V, it is suitable for power management applications. The AO4618 utilizes logic-level gate technology for enhanced drive efficiency. Its input capacitance (Ciss) is 415pF at 20V, with a maximum gate charge (Qg) of 12nC at 10V. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a surface mount 8-SOIC package, provided in tape and reel. This component finds application in automotive, industrial, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C8A, 7A
Input Capacitance (Ciss) (Max) @ Vds415pF @ 20V
Rds On (Max) @ Id, Vgs19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-SOIC

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