AS7C325632-10BIN
IC SRAM 8MBIT PARALLEL 90TFBGAManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS7C325632-10BIN is an 8Mbit asynchronous SRAM component. This parallel SRAM features an access time of 10 ns and a word write cycle time of 10 ns. The memory organization is 1M x 8, providing a total storage capacity of 8 megabits. Operating within a voltage supply range of 2.7V to 3.6V, this component is designed for surface mount applications. It is housed in a 90-TFBGA (8x13) package and operates across an industrial temperature range of -40°C to 85°C. This memory IC is suitable for use in various industrial and consumer electronics applications requiring high-speed data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 90-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 90-TFBGA (8x13) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 1M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
AS6C62256-55STIN
IC SRAM 256KBIT PARALLEL 28STSOP
AS4C32M16MSA-6BINTR
IC DRAM 512MBIT PARALLEL 54FBGA
AS1C512K16P-70BIN
IC PSRAM 8MBIT PARALLEL 48FBGA
