AS6C8008-55BINTR
IC SRAM 8MBIT PARALLEL 48TFBGAManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS6C8008-55BINTR is an asynchronous SRAM memory component with a memory organization of 1M x 8, providing a total of 8Mbit of storage. This device features a parallel memory interface and a rapid access time of 55 ns, with a corresponding write cycle time of 55 ns. The component operates across a voltage supply range of 2.7V to 5.5V and is designed for surface mounting, housed in a compact 48-TFBGA (6x8) package. Its operational temperature range is -40°C to 85°C. The AS6C8008-55BINTR is suitable for applications in industrial control, automotive systems, and communications infrastructure where reliable, high-speed volatile memory is essential. Packaging is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 1M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
AS1C512K16P-70BIN
IC PSRAM 8MBIT PARALLEL 48FBGA
AS4C64M8SA-7TCN
IC DRAM 512MBIT PAR 54TSOP II
N25Q064A13EF8H0E
IC FLASH 64MBIT SPI 8VDFPN
