AS6C6416-55BINTR
IC SRAM 64MBIT PARALLEL 48TFBGAManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS6C6416-55BINTR is a 64Mbit asynchronous SRAM device. This component features a parallel memory interface with a memory organization of 4M x 16. The device offers an access time of 55 ns and a write cycle time of 55 ns. Operating from a voltage supply range of 2.7V to 3.6V, it is designed for surface mount applications. The AS6C6416-55BINTR is housed in a 48-TFBGA (8x10) package and operates within an industrial temperature range of -40°C to 85°C. This memory solution is suitable for use in various industrial and consumer electronics applications requiring high-speed data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (8x10) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 4M x 16 |
| Programmable | Not Verified |
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