AS6C2016-55ZIN
IC SRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS6C2016-55ZIN is a 2Mbit asynchronous SRAM device with a parallel interface. This component offers a fast access time of 55 ns and a write cycle time of 55 ns, ensuring efficient data handling. The memory is organized as 128K x 16, providing a flexible 2-megabit capacity. It operates over a wide voltage range of 2.7V to 5.5V and is specified for an industrial temperature range of -40°C to 85°C. The AS6C2016-55ZIN is housed in a 44-TSOP II surface-mount package, suitable for high-density board designs. This memory solution is commonly utilized in industrial automation, telecommunications, and consumer electronics applications where reliable and fast volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
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