AS6C2016-55BINTR
IC SRAM 2MBIT PARALLEL 48TFBGAManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS6C2016-55BINTR is a 2Mbit asynchronous SRAM memory device. This component features a parallel interface with a memory organization of 128K x 16 bits, providing a fast 55 ns access time. The AS6C2016-55BINTR operates within a voltage supply range of 2.7V to 5.5V and has a write cycle time of 55 ns. Packaged in a compact 48-TFBGA (6x8) form factor, it is designed for surface mount applications. The component is rated for an operating temperature range of -40°C to 85°C. This memory solution is suitable for applications in industrial, consumer electronics, and telecommunications sectors requiring high-speed data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
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