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AS6C2016-55BIN

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AS6C2016-55BIN

IC SRAM 2MBIT PARALLEL 48TFBGA

Manufacturer: Alliance Memory, Inc.

Categories: Memory

Quality Control: Learn More

Alliance Memory, Inc. AS6C2016-55BIN is an asynchronous SRAM memory component with a 2Mbit density. This parallel interface device features a memory organization of 128K x 16 and offers an access time of 55 ns with a write cycle time of 55 ns. The component operates within a voltage supply range of 2.7V to 5.5V and is designed for surface mounting within a 48-TFBGA (6x8) package. Its operating temperature range is -40°C to 85°C (TA). This memory IC is suitable for applications in industrial, automotive, and consumer electronics sectors requiring high-speed data storage.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case48-TFBGA
Mounting TypeSurface Mount
Memory Size2Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 5.5V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package48-TFBGA (6x8)
Write Cycle Time - Word, Page55ns
Memory InterfaceParallel
Access Time55 ns
Memory Organization128K x 16
ProgrammableNot Verified

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