AS6C2008-55BIN
IC SRAM 2MBIT PARALLEL 36TFBGAManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS6C2008-55BIN is a 2Mbit asynchronous SRAM device organized as 256K x 8. Featuring a rapid 55 ns access time, this component is designed for demanding applications requiring high-speed data storage and retrieval. The AS6C2008-55BIN operates with a supply voltage range of 2.7V to 3.6V. Its compact 36-TFBGA (6x8) package, suitable for surface mounting, makes it ideal for space-constrained designs. Operating within a temperature range of -40°C to 85°C, this memory IC finds utility in various industrial automation, networking, and consumer electronics systems. The write cycle time is also rated at 55 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 36-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 36-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 256K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
AS4C64M16D1-6TCNTR
IC DRAM 1GBIT PAR 66TSOP II
AS7C31025B-12JCNTR
IC SRAM 1MBIT PARALLEL 32SOJ
AS6C1016-55BINTR
IC SRAM 1MBIT PARALLEL 48TFBGA
