AS4C64M8D1-5BCN
IC DRAM 512MBIT PARALLEL 60FBGAManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS4C64M8D1-5BCN is a 512Mbit SDRAM, DDR memory component organized as 64M x 8. This volatile memory device operates at a clock frequency of 200 MHz with a fast access time of 700 ps and a write cycle time of 15ns. Featuring a parallel memory interface, it is housed in a compact 60-FBGA (8x13) surface mount package. The AS4C64M8D1-5BCN requires a supply voltage ranging from 2.3V to 2.7V and operates within a temperature range of 0°C to 70°C. This component is suitable for applications in networking, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.3V ~ 2.7V |
| Technology | SDRAM - DDR |
| Clock Frequency | 200 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (8x13) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 700 ps |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
AS6C2016-55ZIN
IC SRAM 2MBIT PARALLEL 44TSOP II
AS4C32M16D1A-5TAN
IC DRAM 512MBIT PAR 66TSOP II
M58BW016FB7T3F
IC FLASH 16MBIT CFI 80PQFP
