AS4C64M16D1-6TCN
IC DRAM 1GBIT PAR 66TSOP IIManufacturer: Alliance Memory, Inc.
Categories: Memory
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Alliance Memory, Inc. AS4C64M16D1-6TCN is a 1Gbit Synchronous Dynamic Random-Access Memory (SDRAM) device. This component features a 64M x 16 memory organization, providing a total capacity of 1 Gigabit. It operates at a clock frequency of 166 MHz with an access time of 700 ps. The memory interface is parallel, utilizing DDR technology. The AS4C64M16D1-6TCN is housed in a 66-TSOP II package, suitable for surface mounting. It operates within a voltage supply range of 2.3V to 2.7V and has a word/page write cycle time of 15ns. This memory component is relevant for applications in consumer electronics, industrial automation, and telecommunications. The operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 66-TSSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.3V ~ 2.7V |
| Technology | SDRAM - DDR |
| Clock Frequency | 166 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 66-TSOP II |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 700 ps |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
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