AS4C4M16D1A-5TAN
IC DRAM 64MBIT PAR 66TSOP IIManufacturer: Alliance Memory, Inc.
Categories: Memory
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Alliance Memory, Inc. AS4C4M16D1A-5TAN is a 64-Mbit Synchronous DRAM (SDRAM) device featuring a 4M x 16 memory organization. This component operates with a clock frequency of 200 MHz, offering a fast access time of 700 ps. The memory interface is parallel, and the device conforms to the DDR SDRAM technology. Designed for surface mounting, it is supplied in a 66-TSOP II package. The operating voltage range is 2.3V to 2.7V, with a word/page write cycle time of 15ns. This automotive-grade component is qualified to AEC-Q100 standards and operates within an ambient temperature range of -40°C to 105°C. Its robust specifications make it suitable for applications in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 66-TSSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.3V ~ 2.7V |
| Technology | SDRAM - DDR |
| Clock Frequency | 200 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 66-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 700 ps |
| Memory Organization | 4M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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