AS4C256M16MD4-062BAN
IC DRAM 4GBIT LVSTL 200FBGAManufacturer: Alliance Memory, Inc.
Categories: Memory
Quality Control: Learn More
Alliance Memory, Inc. AS4C256M16MD4-062BAN is a 4 Gbit LPDDR4 SDRAM memory component. This device operates at a 1.6 GHz clock frequency, providing a 3.5 ns access time. It features a 256M x 16 memory organization and utilizes LVSTL signaling. The AS4C256M16MD4-062BAN is housed in a 200-FBGA (10x14.5) package, suitable for surface mount applications. Operating within a temperature range of -40°C to 105°C (TC), this component supports supply voltages between 1.06V to 1.17V and 1.7V to 1.95V. The write cycle time for word and page operations is 18 ns. This memory component is commonly integrated into systems for consumer electronics and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4 |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-FBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL |
| Access Time | 3.5 ns |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
AS6C2016-55ZIN
IC SRAM 2MBIT PARALLEL 44TSOP II
AS4C32M16D1A-5TAN
IC DRAM 512MBIT PAR 66TSOP II
M58BW016FB7T3F
IC FLASH 16MBIT CFI 80PQFP
