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P2111A

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P2111A

Standard SRAM, 256X4, 300ns, MOS, PDIP18

Manufacturer: Advanced Micro Devices

Categories: SRAMs

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Advanced Micro Devices P2111A is a standard SRAM component from the P2111 series. This MOS technology device features a memory organization of 256 words by 4 bits, providing a total density of 1024 bits. It operates asynchronously with a maximum access time of 300 ns. The P2111A utilizes common I/O with 3-state output characteristics and is housed in an 18-lead PDIP (Plastic Dual In-line Package) with through-hole mounting. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 4.75V and 5.25V. This component is suitable for applications in industrial control and general-purpose memory systems.

Additional Information

Series: P2111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyMOS
Access_Time_Max300.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PDIP-T18
Memory_Density1024.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization256X4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words256.0000000000000000
Number_of_Words_Code256
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Output_EnableNo
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP18,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Supply_Voltage_Max5.25000
Supply_Voltage_Min4.75000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_PositionDual

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