P2111-1
Standard SRAM, 256X4, 500ns, MOS, PDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices P2111-1 is a standard SRAM featuring a 256 words x 4 bits organization, resulting in a 1024 bit memory density. This asynchronous MOS device offers a maximum access time of 500ns and operates with a common I/O type. The P2111 series component is housed in an 18-lead PDIP plastic package with through-hole mounting. It supports a supply voltage range of 4.75V to 5.25V and operates within a temperature range of 0°C to 70°C. The output characteristics are 3-state. This component finds application in various industrial and consumer electronics requiring reliable data storage.
Additional Information
Series: P2111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 500.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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