P1101A1TB
Standard SRAM, 256X1, 1000ns, MOS, PDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices P1101A1TB is a 256x1 bit standard SRAM organized as 256 words with 1 bit per word. This asynchronous memory component utilizes MOS technology and features a maximum access time of 1000ns. The output characteristics are 3-state, and it operates over a temperature range of 0°C to 70°C. The P1101A1TB is housed in a 16-lead Plastic Dual In-line Package (PDIP) with through-hole termination, conforming to the R-PDIP-T16 standard. This component is suitable for applications requiring basic memory storage in industrial and consumer electronics.
Additional Information
Series: P1101A1RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 1000.0000000000000000 |
| JESD_30_Code | R-PDIP-T16 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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