C2112A-4
Standard SRAM, 256X4, 400ns, MOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices C2112A-4 is a standard SRAM component from the C2112 series. This asynchronous MOS SRAM offers a memory organization of 256 words by 4 bits, providing a total memory density of 1Kbit. Featuring a maximum access time of 400ns, it utilizes 3-state output characteristics and operates within a supply voltage range of 4.75V to 5.25V. The component is housed in a 16-lead ceramic glass-sealed dual in-line package (CDIP16, R-GDIP-T16). This through-hole device is suitable for applications requiring reliable, non-volatile data storage. The C2112A-4 finds application in industrial control, telecommunications, and legacy system upgrades where robust memory solutions are essential.
Additional Information
Series: C2112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 19.4310 |
| Width | 7.6200 |
| Technology | MOS |
| Access_Time_Max | 400.0000000000000000 |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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