C2112A-2
Standard SRAM, 256X4, 250ns, MOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices C2112A-2 is a standard SRAM with a memory organization of 256 words by 4 bits, providing a total density of 1024 bits. This asynchronous MOS memory features a maximum access time of 250ns. The component operates with a supply voltage range of 4.75V to 5.25V. Housed in a 16-lead ceramic dual in-line package (CDIP16), it is designed for through-hole mounting. The C2112A-2 is suitable for applications in industrial control systems and telecommunications where reliable, non-volatile data storage is required.
Additional Information
Series: C2112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | MOS |
| Length | 19.4310 |
| Access_Time_Max | 250.0000000000000000 |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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