C2112
Standard SRAM, 256X4, 1000ns, MOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices C2112 is a 1024-bit standard SRAM organized as 256 words by 4 bits. This MOS technology memory component features an asynchronous operating mode with a maximum access time of 1000 ns. The C2112 is housed in a 16-lead Ceramic Dual In-line Package (CDIP) with through-hole mounting. It operates with a supply voltage range of 4.75V to 5.25V and offers 3-state outputs. Applications for this memory device include industrial control systems and legacy data storage solutions. The Advanced Micro Devices C2112 series component, part number C2112, is designed for reliable performance in various electronic systems.
Additional Information
Series: C2112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | MOS |
| Length | 19.4310 |
| Access_Time_Max | 1000.0000000000000000 |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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