C2111A-4
Standard SRAM, 256X4, 400ns, MOS, CDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices C2111A-4 is a standard SRAM component from the C2111 series, featuring a memory organization of 256 words by 4 bits, providing a total density of 1024 bits. This asynchronous MOS memory device operates with a maximum access time of 400 ns and a typical supply voltage of 5V, ranging from 4.75V to 5.25V. The C2111A-4 utilizes 3-state outputs and is housed in an 18-lead ceramic dual in-line package (CDIP), specifically R-CDIP-T18, designed for through-hole mounting. Its common I/O type and parallel interface are suitable for applications in consumer electronics and industrial control systems where reliable, standard memory is required. The operating temperature range is 0°C to 70°C.
Additional Information
Series: C2111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 400.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-CDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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