C2111
Standard SRAM, 256X4, 1000ns, MOS, CDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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The Advanced Micro Devices C2111 is a static random-access memory (SRAM) component from the C2111 series. This standard SRAM features a memory organization of 256 words by 4 bits, providing a total memory density of 1024 bits. It operates asynchronously with a maximum access time of 1000 nanoseconds. The component utilizes MOS technology and has an I/O type of COMMON with 3-state output characteristics. Supplied in an 18-pin CDIP package (R-CDIP-T18), this through-hole device is designed for a nominal supply voltage of 5V, with a range of 4.75V to 5.25V. Operating temperature ranges from 0°C to 70°C. This component is suitable for applications in industrial and consumer electronics where reliable, standard memory is required.
Additional Information
Series: C2111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 1000.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-CDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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