AMP2111
Standard SRAM, 256X4, 1000ns, NMOS, PDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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The Advanced Micro Devices AMP2111 is a standard asynchronous SRAM device, categorized under the AMP2111 series. This component offers a memory organization of 256 words by 4 bits, resulting in a total memory density of 1 kilobit. It features a maximum access time of 1000 ns and operates using NMOS technology. The device is housed in an 18-pin PDIP (Plastic Dual In-line Package), specifically a R-PDIP-T18 configuration, with through-hole termination. It requires a supply voltage ranging from 4.75V to 5.25V, with a nominal value of 5V. The AMP2111 supports a 3-state output characteristic and includes an output enable function. This component finds application in various industrial and consumer electronics systems where reliable, non-volatile data storage is essential.
Additional Information
Series: AMP2111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Time_Max | 1000.0000000000000000 |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | Yes |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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