AMP2101-2
Standard SRAM, 256X4, 650ns, NMOS, PDIP22Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AMP2101-2 is a 1024-bit (256 words x 4 bits) NMOS Static Random-Access Memory (SRAM). This asynchronous memory device features a maximum access time of 650ns and a 3-state output with an output enable control. The AMP2101 series component operates within a temperature range of 0°C to 70°C and requires a supply voltage between 4.75V and 5.25V, with a nominal value of 5V. It is housed in a 22-lead Plastic Dual In-line Package (PDIP) with through-hole mounting. This memory component is suitable for applications in industrial control, consumer electronics, and data acquisition systems where reliable data storage is critical.
Additional Information
Series: AMP2101RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 27.9400 |
| Width | 10.1600 |
| Technology | NMOS |
| Access_Time_Max | 650.0000000000000000 |
| JESD_30_Code | R-PDIP-T22 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | Yes |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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