AMP2101-1
Standard SRAM, 256X4, 500ns, NMOS, PDIP22Manufacturer: Advanced Micro Devices
Categories: SRAMs
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The Advanced Micro Devices AMP2101-1 is a standard Static Random Access Memory (SRAM) component from the AMP2101 series. This NMOS technology device offers a memory organization of 256 words by 4 bits, resulting in a total memory density of 1Kbit. It features a maximum access time of 500ns and operates asynchronously. The component is housed in a 22-lead PDIP package (R-PDIP-T22) with through-hole mounting. This asynchronous SRAM is suitable for applications requiring rapid data storage and retrieval, including industrial control systems and legacy computing platforms. The supply voltage range is 4.75V to 5.25V, with a nominal voltage of 5V. The output characteristics include 3-state capability and an output enable function.
Additional Information
Series: AMP2101RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 27.9400 |
| Width | 10.1600 |
| Technology | NMOS |
| Access_Time_Max | 500.0000000000000000 |
| JESD_30_Code | R-PDIP-T22 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | Yes |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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