AM99CL641-35/BXC
Standard SRAM, 64KX1, 35ns, CMOS, CDIP22Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM99CL641-35-BXC is a 65536-bit CMOS SRAM organized as 64K x 1. This asynchronous memory component features a maximum access time of 35ns and operates from a 5V supply voltage. The AM99CL641 series device offers separate I/O and 3-state output characteristics. Housed in a 22-lead Ceramic DIP package (JESD-30 Code R-XDIP-T22), it is designed for through-hole mounting. Operating temperature ranges from -55°C to +125°C. Applications for this memory component include telecommunications, industrial control, and defense systems requiring robust and reliable memory solutions. Screening levels include 38535Q/M, 38534H, and 883B.
Additional Information
Series: AM99CL641RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 35.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Standby_Current_Max | 0.000300000000000 |
| Standby_Voltage_Min | 2.000000 |
| Supply_Current_Max | 100.000000000000000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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