AM91L50-35DCB
Standard SRAM, 1KX4, 35ns, NMOS, CDIP24Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM91L50-35DCB is a 4096-bit static random-access memory (SRAM) device. This asynchronous NMOS SRAM features a memory organization of 1K x 4 bits, providing a total memory density of 4 Kbits. The component offers a maximum access time of 35ns and operates from a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. Designed for through-hole mounting, it is housed in a 24-pin Ceramic Dual-In-Line (CDIP) package, specified by JESD-30 code R-GDIP-T24. The output characteristics are 3-state with an output enable function. This memory component is suitable for applications requiring standard SRAM functionality, with an operating temperature range of 0°C to 70°C.
Additional Information
Series: AM91L50RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 31.9405 |
| Width | 7.6200 |
| Technology | NMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-GDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | Yes |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP24,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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