AM91L14BDCT
Standard SRAM, 1KX4, 450ns, MOS, CDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM91L14BDCT is a standard SRAM device offering a memory organization of 1K words by 4 bits, resulting in a total memory density of 4Kb. This asynchronous MOS SRAM features a maximum access time of 450ns and operates with a nominal supply voltage of 5V. The I/O type is common, with 3-state output characteristics. Packaged in an 18-lead ceramic dual in-line package (CDIP18) with through-hole termination and a 2.54mm terminal pitch, this component is designed for applications requiring reliable, non-volatile data storage. Its operating temperature range is 0°C to 70°C. This part is suitable for use in industrial control systems and legacy embedded designs.
Additional Information
Series: AM91L14RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 450.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1KX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1024.0000000000000000 |
| Number_of_Words_Code | 1k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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