AM91L11CDMB
Standard SRAM, 256X4, 300ns, MOS, CDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM91L11CDMB is a 1024-bit standard SRAM organized as 256 words by 4 bits. Featuring a maximum access time of 300ns, this asynchronous MOS memory component operates with a common I/O type and 3-state output characteristics. It is housed in an 18-lead ceramic dual-in-line package (CDIP), suitable for through-hole mounting. The operating temperature range spans from -55°C to 125°C, with a nominal supply voltage of 5V. This device is manufactured to MIL-STD-883 Class B (Modified) screening levels, making it suitable for demanding applications in aerospace, defense, and industrial control systems.
Additional Information
Series: AM91L11RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-CDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class B (Modified) |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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