AM91L01DDCB
Standard SRAM, 256X4, 250ns, MOS, CDIP22Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM91L01DDCB is a 1024-bit static random-access memory (SRAM) organized as 256 words by 4 bits. This asynchronous SRAM features a maximum access time of 250ns and operates using MOS technology. The component employs separate I/O, 3-state output characteristics, and a standard asynchronous operating mode. Housed in a 22-terminal ceramic dual in-line package (CDIP22), it is designed for through-hole mounting with a terminal pitch of 2.54mm. This memory component is suitable for applications in industrial control systems and legacy computing platforms.
Additional Information
Series: AM91L01RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 22 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Current_Max | 36.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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