AM9112CDCTB
Standard SRAM, 256X4, 300ns, MOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM9112CDCTB is a 1024-bit standard Static Random-Access Memory (SRAM) organized as 256 words by 4 bits. This asynchronous memory features a maximum access time of 300ns and utilizes MOS technology. The component is housed in a 16-lead Ceramic Dual In-line Package (CDIP) with through-hole termination. Its output characteristics are 3-state, supporting parallel data transfer. The operating temperature range is 0°C to 70°C. This device is suitable for applications requiring reliable, non-volatile data storage in various industrial and consumer electronics sectors.
Additional Information
Series: AM9112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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