AM9112BDM
Standard SRAM, 256X4, 400ns, NMOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM9112BDM is a 1024-bit static random-access memory organized as 256 words by 4 bits. This NMOS technology component offers an asynchronous operating mode with a maximum access time of 400 nanoseconds. Featuring 3-state outputs, it utilizes a standard SRAM memory IC type. The AM9112BDM is housed in a 16-lead ceramic dual in-line package (CDIP) with through-hole mounting. It operates over a temperature range of -55°C to +125°C and requires a supply voltage between 4.5V and 5.5V. This component is often found in demanding industrial and military applications where robust performance and reliability are critical.
Additional Information
Series: AM9112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | NMOS |
| Length | 20.3200 |
| Access_Time_Max | 400.0000000000000000 |
| JESD_30_Code | R-CDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class C |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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