AM9112B/BVA
Standard SRAM, 256X4, 400ns, MOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM9112 series AM9112B-BVA is a 1K bit static random-access memory (SRAM) device. This component features a memory organization of 256 words by 4 bits, providing a total memory density of 1024 bits. The AM9112B-BVA operates asynchronously with a maximum access time of 400 nanoseconds. It is constructed using MOS technology and offers 3-state output characteristics. The device is housed in a 16-lead ceramic dual in-line package (CDIP16, R-GDIP-T16) suitable for through-hole mounting. Operating over a temperature range of -55°C to 125°C, it requires a supply voltage between 4.5V and 5.5V. Typical applications for this standard SRAM include industrial control systems and legacy equipment designs.
Additional Information
Series: AM9112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 19.4310 |
| Width | 7.6200 |
| Technology | MOS |
| Access_Time_Max | 400.0000000000000000 |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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