AM9112ADMB
Standard SRAM, 256X4, 500ns, MOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM9112ADMB is a 1024-bit MOS Static Random Access Memory organized as 256 words by 4 bits. This asynchronous SRAM features a maximum access time of 500ns and a 3-state output characteristic. The component operates across a temperature range of -55°C to 125°C and is housed in a 16-lead ceramic dual in-line package (CDIP16). Designed for through-hole mounting, this part adheres to MIL-STD-883 Class B (Modified) screening levels, making it suitable for demanding applications in industrial and defense sectors. The AM9112 series from Advanced Micro Devices provides reliable memory solutions for embedded systems requiring robust performance and extended operational lifespan.
Additional Information
Series: AM9112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 500.0000000000000000 |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class B (Modified) |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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