AM9112ADCTB
Standard SRAM, 256X4, 500ns, MOS, CDIP16Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM9112ADCTB is a 1024-bit MOS static random-access memory. This standard SRAM offers a memory organization of 256 words by 4 bits, providing a total density of 1 Kbit. The asynchronous operating mode and 3-state output characteristics are complemented by a maximum access time of 500ns. Housed in a 16-lead ceramic dual in-line package (CDIP16), this through-hole component is designed for applications requiring reliable, non-volatile data storage. Its specifications make it suitable for use in industrial automation and communications infrastructure. The AM9112 series leverages MOS technology for efficient operation.
Additional Information
Series: AM9112RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 500.0000000000000000 |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 16 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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