AM9111DDCB
Standard SRAM, 256X4, 250ns, MOS, CDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
Quality Control: Learn More
Advanced Micro Devices AM9111 series asynchronous SRAM, part number AM9111DDCB, offers a memory organization of 256 words by 4 bits, providing a total density of 1Kbit. This MOS technology device features a maximum access time of 250 nanoseconds and operates with a common I/O type and 3-state output characteristics. The component is housed in a 18-lead Ceramic Dual In-line Package (CDIP) with through-hole termination. Designed for operation within a temperature range of 0°C to 70°C, it requires a supply voltage between 4.75V and 5.25V. This SRAM is suitable for applications in industrial control, telecommunications, and legacy computing systems.
Additional Information
Series: AM9111RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-CDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
AM9111BFM
Standard SRAM, 256X4, 400ns, NMOS, CDFP24
AM9111BFMB
Standard SRAM, 256X4, 400ns, MOS, CDFP24
AM9111A/BVA
Standard SRAM, 256X4, 500ns, MOS, CDIP18