AM9111ADM
Standard SRAM, 256X4, 500ns, NMOS, CDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM9111ADM is a 1024-bit standard SRAM organized as 256 words by 4 bits. This asynchronous NMOS memory device features a maximum access time of 500 ns and operates with a common I/O type. The AM9111ADM is housed in an 18-lead Ceramic Dual In-line Package (CDIP) with through-hole mounting. It supports a supply voltage range of 4.5V to 5.5V, with a nominal of 5V. The output characteristics are 3-state, with an output enable function. This component is designed for applications requiring high reliability, with a MIL-STD-883 Class C screening level. Operating temperature ranges from -55°C to 125°C, making it suitable for demanding environments in aerospace, defense, and industrial sectors.
Additional Information
Series: AM9111RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Time_Max | 500.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-CDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Output_Enable | Yes |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class C |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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