AM9101CPCB
Standard SRAM, 256X4, 300ns, MOS, PDIP22Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM9101 series asynchronous SRAM, part number AM9101CPCB, offers a 1024-bit memory density organized as 256 words by 4 bits. This MOS technology component features a maximum access time of 300ns and operates with a nominal supply voltage of 5V, within a 4.75V to 5.25V range. The AM9101CPCB utilizes separate I/O and 3-state output characteristics, with parallel data access. It is housed in a 22-lead PDIP package (R-PDIP-T22) with through-hole mounting and a terminal pitch of 2.54mm. Typical applications include data buffering and storage in industrial control systems and legacy computing platforms.
Additional Information
Series: AM9101RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 10.1600 |
| Technology | MOS |
| Length | 28.0670 |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T22 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Output_Enable | No |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 5.0800 |
| Supply_Current_Max | 60.000000000000000 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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