AM9101ADMB
Standard SRAM, 256X4, 500ns, MOS, CDIP22Manufacturer: Advanced Micro Devices
Categories: SRAMs
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The Advanced Micro Devices AM9101ADMB is a 1024-bit MOS static random-access memory organized as 256 words by 4 bits. This asynchronous SRAM features a maximum access time of 500ns and a 3-state output characteristic. It operates across a temperature range of -55°C to 125°C and utilizes separate input/output lines. The component is housed in a 22-lead ceramic dual in-line package (CDIP22) with through-hole mounting intended for a 2.54mm terminal pitch. This device is suitable for applications requiring reliable memory storage in demanding environments, including aerospace and defense systems, given its MIL-STD-883 Class B (Modified) screening level. The supply current maximum is 60mA.
Additional Information
Series: AM9101RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 500.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 22 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class B (Modified) |
| Supply_Current_Max | 60.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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