5962-8608104RA
Standard SRAM, 4KX4, 70ns, NMOS, CDIP20Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices presents the 5962-8608104RA, a 4K x 4 Standard SRAM with a maximum access time of 70ns. This NMOS technology component, part of the 5962-8608104 series, features a 16Kb memory density and operates asynchronously. Housed in a 20-pin Ceramic Dual In-line Package (CDIP), its through-hole terminals are designed for robust integration. The component operates within a temperature range of -55°C to +125°C and supports a supply voltage from 4.5V to 5.5V. This device is suitable for applications demanding reliable memory solutions in aerospace, defense, and industrial systems.
Additional Information
Series: 5962-8608104RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | NMOS |
| Length | 25.4000 |
| Access_Time_Max | 70.0000000000000000 |
| JESD_30_Code | R-GDIP-T20 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 |
| Seated_Height_Max | 3.1240 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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