5962-01-096-6577
Standard SRAM, 256X4, 400ns, MOS, PDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices, a standard SRAM component in the 5962-010966577 series, offers a 1024-bit memory density organized as 256 words by 4 bits. This asynchronous MOS device features a maximum access time of 400 nanoseconds and a 3-state output characteristic. The 5962-01-096-6577 part is housed in an 18-terminal PDIP package, designed for through-hole mounting. Operating within a temperature range of -55°C to +125°C, it requires a supply voltage between 4.5V and 5.5V, with a nominal value of 5V. This component is suitable for applications requiring reliable data storage in demanding environments, often found in defense and aerospace systems.
Additional Information
Series: 5962-010966577RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 400.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-PRF-38535 Class T |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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