5962-01-063-1968
Standard SRAM, 256X4, 250ns, MOS, PDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices AM2125, a standard SRAM component from the 5962-010631968 series, offers a memory organization of 256 words by 4 bits. This asynchronous memory features a maximum access time of 250ns and operates with a common I/O type. The device utilizes MOS technology and is housed in an 18-lead PDIP (Plastic Dual In-line Package) with through-hole mounting. Operating across a temperature range of -55°C to 125°C, it supports a supply voltage from 4.5V to 5.5V. The 3-state output characteristic is suitable for applications requiring bus contention management. This component finds application in aerospace, defense, and industrial sectors requiring robust and reliable memory solutions.
Additional Information
Series: 5962-010631968RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-PRF-38535 Class T |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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