5962-01-039-2024
Standard SRAM, 256X4, 650ns, MOS, PDIP18Manufacturer: Advanced Micro Devices
Categories: SRAMs
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Advanced Micro Devices offers the 5962-01-039-2024, a standard SRAM component from the 5962-010392024 series. This asynchronous memory device features a 256 word by 4 bit organization with a maximum access time of 650 ns. Fabricated using MOS technology, it operates over a temperature range of -55°C to +125°C and requires a supply voltage between 4.5V and 5.5V. The component is housed in an 18-lead plastic dual in-line package (PDIP18) with through-hole termination. Designed for high-reliability applications, this device is suitable for use in aerospace, defense, and industrial sectors requiring robust memory solutions. The output characteristics are 3-state and the I/O type is common.
Additional Information
Series: 5962-010392024RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 650.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 256X4 |
| Memory_Width | 4 |
| Number_of_Terminals | 18 |
| Number_of_Words | 256.0000000000000000 |
| Number_of_Words_Code | 256 |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-PRF-38535 Class T |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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