AM9060EPCB
DRAM, 4KX1, 200ns, MOS, PDIP22Manufacturer: Advanced Micro Devices
Categories: DRAMs
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Advanced Micro Devices AM9060 series DRAM, part number AM9060EPCB. This MOS technology component features a memory density of 4K words by 1 bit, organized as 4KX1. It offers a maximum access time of 200ns. The component utilizes separate I/O, 3-state output characteristics, and a dual in-line package with 22 terminals (PDIP22). Designed for through-hole mounting, this DRAM operates within a temperature range of 0°C to 70°C. The AM9060EPCB is suitable for applications in industrial control and consumer electronics where reliable memory is essential.
Additional Information
Series: AM9060RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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