AM9060EDCB
DRAM, 4KX1, 200ns, MOS, CDIP22Manufacturer: Advanced Micro Devices
Categories: DRAMs
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Advanced Micro Devices AM9060EDCB is a 4K x 1 MOS DRAM with a maximum access time of 200ns. This component features separate I/O and 3-state output characteristics. The memory organization is 4K words by 1 bit, utilizing a ceramic dual in-line package (CDIP22) with through-hole mounting and a terminal pitch of 2.54mm. Designed for reliable operation within a 0°C to 70°C temperature range, it supports 64 refresh cycles. The AM9060 series memory is suitable for applications in industrial automation and legacy computing systems where robust component selection is critical.
Additional Information
Series: AM9060RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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